Last Generation MOSFETs as Front-End Elements
in Detector Applications

Franco Manfredi
Lawrence Berkeley National Laboratory
June 7, 2002

Abstract:
The seminar discusses the recent advancement in monolithic CMOS processes and the way such an advancement affects their behavior in the broad area of applications with radiation detectors. It will be shown that the reduction in gate oxide thickness and the shrinking in channel length have considerably improved the noise features of MOSFETs, thus enhancing the favor of designers toward the use of MOSFETs in the most demanding applications.